The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Patented Trench Structure. Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters. High power density and low forward voltage
Maximum Continuous Forward Current = 30A
Diode Configuration = Common Cathode
Number of Elements per Chip = 2
Peak Reverse Repetitive Voltage = 100V
Mounting Type = Through Hole
Package Type = TO-220AB
Diode Technology = Schottky
Diode Type = Schottky
Pin Count = 3
Maximum Forward Voltage Drop = 800mV
Delivery on production packaging - Tube. This product is non-returnable.