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The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Diode Configuration = Common Cathode
Maximum Continuous Forward Current = 20A
Number of Elements per Chip = 2
Peak Reverse Repetitive Voltage = 100V
Mounting Type = Surface Mount
Package Type = D2PAK (TO-263)
Diode Type = Schottky
Diode Technology = Schottky
Pin Count = 3
Maximum Forward Voltage Drop = 790mV