Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±8kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely withstand 1.0A surge (8/20 waveshape as defined in IEC 61000-4-5 2nd edition) at a very low clamping voltage.

Features:

• ESD, IEC 61000-4-2,±8kV contact, ±15kV air
• EFT, IEC 61000-4-4, 40A (5/50ns)
• Lightning, 1.0A (8/20 as defined in IEC 61000-4-5 2nd edition)
• Low capacitance of 8.5 pF (@ VR=0V)
• Low leakage current of 0.02?A (TYP) at 5V
• Unidirectional solutions presents half the dynamic resistance of a bidirectional device protects fasten and better
• Industry’s smallest ESD footprint available (01005 DFN plastic)
• Halogen free, Lead free and RoHS compliant
• Moisture Sensitivity Level(MSL -1)
• AEC-Q101 qualified

Applications:

• Mobile Phones
• Smart Phones
• Camcorders
• Portable Medical
• Digital Cameras
• Wearable Technology
• Portable Navigation Components
• Tablets
• Point of Sale Terminals
• Identification Modules