Infineon Technologies AG Diodes, Rectifiers - Single - IDH03SG60C IDH03SG60C

Manufacturer: Infineon Technologies
Win Source Part Number: 068615-IDH03SG60C
Packaging: Tube/Rail
Mounting: Through Hole
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.3V @ 3A
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 15μA @ 600V
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Operating Temperature - Junction: -55°C to 175°C
Categories: Discrete Semiconductor Products
Case / Package: PG-TO220-2
Speed(Frequency): No Recovery Time > 500mA (Io)
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

The Infineon thinQ!â„¢ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diode Configuration = Single
Maximum Continuous Forward Current = 3A
Number of Elements per Chip = 1
Mounting Type = Through Hole
Package Type = TO-220
Diode Technology = SiC Schottky
Diode Type = SiC Schottky
Pin Count = 2
Maximum Forward Voltage Drop = 2.8V
Length = 10.2mm
Delivery on production packaging - Tube. This product is non-returnable.

The Infineon thinQ!â„¢ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diode Configuration = Single
Maximum Continuous Forward Current = 3A
Number of Elements per Chip = 1
Mounting Type = Through Hole
Package Type = TO-220
Diode Technology = SiC Schottky
Diode Type = SiC Schottky
Pin Count = 2
Maximum Forward Voltage Drop = 2.8V
Length = 10.2mm

The Infineon thinQ!â„¢ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diode Configuration = Single
Maximum Continuous Forward Current = 3A
Number of Elements per Chip = 1
Mounting Type = Through Hole
Package Type = TO-220
Diode Technology = SiC Schottky
Diode Type = SiC Schottky
Pin Count = 2
Maximum Forward Voltage Drop = 2.8V
Length = 10.2mm