The Infineon thinQ!â„¢ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Maximum Continuous Forward Current = 4A
Diode Configuration = Single
Number of Elements per Chip = 1
Mounting Type = Through Hole
Package Type = TO-220
Diode Type = SiC Schottky
Diode Technology = SiC Schottky
Pin Count = 2
Maximum Forward Voltage Drop = 2.1V
Length = 10.2mm
Delivery on production packaging - Tube. This product is non-returnable.