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The Infineon thinQ!â„¢ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Diode Configuration = Single
Maximum Continuous Forward Current = 16A
Number of Elements per Chip = 1
Mounting Type = Through Hole
Package Type = TO-247
Diode Technology = SiC Schottky
Diode Type = SiC Schottky
Pin Count = 3
Maximum Forward Voltage Drop = 2.1V
Length = 16.13mm