Infineon Technologies AG CoolSiC™ Schottky Diodes IDW16G65C5

CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q _c x V _f).
The new CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.

Summary of Features

• V _br at 650V
• Improved figure of merit (Q _c x V _f)
• No reverse recovery charge
• Soft switching reverse recovery waveform
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)
• Improved surge capability
• Pb-free lead plating

Benefits

• Higher safety margin against overvoltage and complements CoolMOS™ offer
• Improved efficiency over all load conditions
• Increased efficiency compared to Silicon Diode alternatives
• Reduced EMI compared to snappier Silicon diode reverse recovery waveform
• Highly stable switching performance
• Reduced cooling requirements
• Reduced risks of thermal runaway
• RoHS compliant
• Very high quality and high volume manufacturing capability

Potential Applications

• Solar
• Uninterruptible power supply (UPS)
• Motor control and drives
  

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The Infineon thinQ!â„¢ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diode Configuration = Single
Maximum Continuous Forward Current = 16A
Number of Elements per Chip = 1
Mounting Type = Through Hole
Package Type = TO-247
Diode Technology = SiC Schottky
Diode Type = SiC Schottky
Pin Count = 3
Maximum Forward Voltage Drop = 2.1V
Length = 16.13mm

The Infineon thinQ!â„¢ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diode Configuration = Single
Maximum Continuous Forward Current = 16A
Number of Elements per Chip = 1
Mounting Type = Through Hole
Package Type = TO-247
Diode Technology = SiC Schottky
Diode Type = SiC Schottky
Pin Count = 3
Maximum Forward Voltage Drop = 2.1V
Length = 16.13mm
Delivery on production packaging - Tube. This product is non-returnable.