RFMW Ltd. Datasheets for Gunn and IMPATT Diodes
Gunn diodes or transfer electron devices (TED) exhibit a negative resistance region. They are used in high-frequency applications, often for building RF oscillators. Impact ionization avalanche transit-time (IMPATT) diodes are designed to operate at very high frequency and power. They are used as elements in RF and microwave devices.
Gunn and IMPATT Diodes: Learn more
|Diode, Gunn, K-Band, 18-26.5 GHz|
|Gunn Diode, X-band, 10mW, 6V|