You have successfully added from to your part list.
The SemiGen SGP7000 series of PIN Diodes are processed with a high-resistivity epi that have intrinsic layers that range in thickness from 4 micron to 200 micron depending on performance specifications. These devices are typically manufactured with either a robust thermal-oxide passivation or ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. They are available as chips or in your choice of packages.
Low Capacitance and Resistance
Easily Bondable with our F.A.C. Mesas
For use in low- to high-power switch, attenuator, duplexer and phase-shifting applications from 2 to 20 GHz.