Radwell International Datasheets for Power MOSFET

Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
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Product Name Notes
DANAHER CONTROLS PITP002501 ( POWER MOSFET IRF841 ) DANAHER CONTROLS EAGLE SIGNAL PITP002501 POWER MOSFET IRF841 AVAILABLE SURPLUS NEVER USED SURPLUS 2 YEAR RADWELL WARRANTY Alternate Part Number: EAGLE SIGNAL PITP002501
FUJI ELECTRIC 2SK1101 ( N-CHANNEL POWER MOSFET, 450V 10A 50W, TO-220ML ) FUJI ELECTRIC 2SK1101 N-CHANNEL POWER MOSFET 450V 10A 50W TO-220ML AVAILABLE SURPLUS NEVER USED SURPLUS 2 YEAR RADWELL WARRANTY
FUJI ELECTRIC 2SK2653 ( POWER MOSFET 900V 6A 80W TO-3PF +/-30VGSS ) FUJI ELECTRIC 2SK2653 POWER MOSFET 900V 6A 80W TO-3PF +/-30VGSS AVAILABLE SURPLUS NEVER USED SURPLUS 2 YEAR RADWELL WARRANTY
FUJI ELECTRIC 2SK2765 ( POWER MOSFET N-CHANNEL 800V 7A 125W 1.62OHM ) FUJI ELECTRIC 2SK2765 POWER MOSFET N-CHANNEL 800V 7A 125W 1.62OHM AVAILABLE SURPLUS NEVER USED SURPLUS 2 YEAR RADWELL WARRANTY
FUJI ELECTRIC 2SK3502 ( TRANSISTOR POWER MOSFET N-CHANNEL ) FUJI ELECTRIC 2SK3502 TRANSISTOR POWER MOSFET N-CHANNEL AVAILABLE SURPLUS NEVER USED SURPLUS 2 YEAR RADWELL WARRANTY
FUJI ELECTRIC FMH09N90E ( N-CHANNEL SILICON POWER MOSFET ) FUJI ELECTRIC FMH09N90E N-CHANNEL SILICON POWER MOSFET AVAILABLE SURPLUS NEVER USED SURPLUS 2 YEAR RADWELL WARRANTY
INTERNATIONAL RECTIFIER F9540N ( TRANSISTOR POWER MOSFET 3PIN FAST SWITCHING ) INTERNATIONAL RECTIFIER F9540N TRANSISTOR POWER MOSFET 3PIN FAST SWITCHING AVAILABLE SURPLUS NEVER USED SURPLUS 2 YEAR RADWELL WARRANTY