Power MOSFET from ROHM Semiconductor GmbH

1200V, 300A, Half bridge, Silicon-carbide (SiC) Power Module -- BSM300D12P2E001

 
 
1200V, 300A, Half bridge, Silicon-carbide (SiC) Power Module -- BSM300D12P2E001 -- View Larger Image
1200V, 300A, Half bridge, Silicon-carbide (SiC) Power Module -- BSM300D12P2E001-Image

Specifications

Product Category
Power MOSFET
V(BR)DSS
1200 volts
IDSS
300000 milliamps
PD
1.88E6 milliwatts
TJ
 
Package Type
 
Transistor Grade / Operating Range