NXP Semiconductors RF & MW Power Amplifier A3I25X050GNR1

Description
The A3I25X050N integrated Doherty circuit is designed with on-chip matching that makes it usable from 2300 to 2700 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.
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Geneva, IL, United States
RF & MW Power Amplifier
A3I25X050GNR1
RF & MW Power Amplifier A3I25X050GNR1
The A3I25X050N integrated Doherty circuit is designed with on-chip matching that makes it usable from 2300 to 2700 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.

The A3I25X050N integrated Doherty circuit is designed with on-chip matching that makes it usable from 2300 to 2700 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number A3I25X050GNR1
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
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