GaAs FET RF transistors are ideal for the first or second stage of base station Low Noise Amplifiers (LNA). The specifications exhibit an excellent combination of low noise figure and enhanced linearity. These GaAs MESFET RF transistors from Avago Technologies are designed for use in wireless and high frequency applications.
Amplifier Type = Linear Amplifier, Low Noise, Power Amplifier
Typical Power Gain = 17.2 dB
Typical Output Power = 23dBm
Typical Noise Figure = 0.85dB
Number of Channels per Chip = 1
Maximum Operating Frequency = 6 GHz
Mounting Type = Surface Mount
Package Type = SOT-89
Pin Count = 3
Dimensions = 4.6 x 2.6 x 1.6mm
Delivery on production packaging - Reel. This product is non-returnable.