RFMW Ltd. Datasheets for RF Amplifiers

RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude.
RF Amplifiers: Learn more

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Product Name Notes
1 GHz Balanced LowNoise Linear Amplifier
1.805 - 1.88 GHz 24.5dBm 7x7 MCM Linear Small Cell
1.930 - 1.995 GHz 27dBm 7x7 MCM Linear Small Cell
1.930 - 1.995 GHz 28dBm 7x7 MCM Linear Small Cell
1218 MHz CATV Push-Pull Driver Amplifier
2.0-3.0 GHzHighLinearity active bias LNA
2.010 - 2.025 GHz 27dBm 7x7 MCM Linear Small Cell
2.11 - 2.17 GHz 27dBm 7x7 MCM Linear Small Cell
2G PAM FLIPCHIP
728 - 768 MHz 27dBm 7x7 MCM Linear Small Cell
Amplifier, .8 to .9 GHz, 34.5 dB, +28dBm High-Efficiency Small Cell PA
Amplifier, 0 - 35 GHz, 11 dB, DIE
Amplifier, 0 to 6 GHz. 13.4 dBm, 17.1 dB, 5V, SOT-89A, InGaP HBT
Amplifier, 0.8 - 2.5GHz, 27dBm, 12dB,
Amplifier, 0.902 - 2.5 GHz, 24 dBm, 28 dB
Amplifier, 1 - 4.2GHz
Amplifier, 1- 3 GHz, 5 W, 11 dB, 28 V, GaN
Amplifier, 17 to 43 GHz, 21 dB, 18 dBm, 4.5 V, QFN 4 x4 mm
Amplifier, 2.5 - 2.7GHz, 36dBm, 14dB,
Amplifier, 2.5- 6 GHz, 25 W, 24 dB, 28 V, GaN, Connectorized
Amplifier, 30 kHz - 50 GHz, 1.4W, 15.5 dB, Traveling Wave
Amplifier, 30 KHz to 50 GHz, MMIC, 15.5 dB Gain, P1dB 22 dBm, 7V, Bare Die
Amplifier, 4.9 - 5.9GHz, 28.5dBm, 13dB,
Amplifier, 5.15-5.85GHz
Amplifier, 500-2000MHz, 26dBm, 20dB Gain, 15 V, Connectorized
Amplifier, 6- 18 GHz, 8 dB, 14 dBm, 4 dB NF, "Z" Configuration
Amplifier, 770 to 915 MHz, 0.74 dB NF, SOT1301
Amplifier, Amplifier Module, 6- 18 GHz, 20 dBm, 15 dB
Amplifier, CATV, .004 to 1.0 GHz, 25 dB, 24 V, SOT-115J
Amplifier, CATV, .040 to 1.003 GHz, 27.5 dB, SOT115J
Amplifier, CATV, .05 to 1.0 GHz, 35 dB, 24 V, SOT-115
Amplifier, CATV, 0.005 - 0.3GHz, 25.5dB, 24V, SOT-115J, Return Path
Amplifier, CATV, 0.04 - 1GHz, 23dB, 24V, SOT-115J
Amplifier, CATV, 0.040 - 1.218 GHz, 25dB, 24V, SOIC-16, GaAs, Push-Pull
Amplifier, CATV, 400 MHz to 1000 MHz, 32 dB, SOT115J
Amplifier, CATV, 45 to 1218 MHz, 22.5 dB, 24V, Power Doubler Module, GaAs/GaN
Amplifier, Digital Controlled Variable Gain, 50- 1000 MHz, 6 Bit, 20 dBm, 38.8 dB
Amplifier, DVGA, .3 to 1.1 GHz, 25 dBm, 36 dB, MCM, 28-Pin, 6 x 6 mm
Amplifier, DVGA, 1.8 - 2.4 GHz, 25 dBm, 31.5 dB, MCM 6 x 6mm
Amplifier, Gain Block ,0 - 8GHz, 19.4dBm, 19.6dB, SOT-89
Amplifier, Gain Block ,0.1 - 10GHz, 12.6dBm, 12.7dB, DIE
Amplifier, Gain Block, .0 - 4.5 GHz, 16.3 dBm, 15.9 dB, SOT-89
Amplifier, Gain Block, .05 to 3 GHz, 18.8 dBm, 15.1 dB, 5 V, InGaP HBT
Amplifier, Gain Block, 0.1- 14 GHz, 13.8 dBm, 12.4 dB, 5 dB NF, Plastic Micro-X Matte Tin
Amplifier, Gain Block, 0.1- 14 GHz, 14.5 dBm, 16.2 dB, 5 dB NF, Plastic Micro-X Matte Tin
Amplifier, Gain Block, 0.1- 14 GHz, 15.1 dBm, 18.1 dB, 5 dB NF, Plastic Micro-X Matte Tin
Amplifier, Gain Block, 0.1- 14 GHz, 16.3 dBm, 18.4 dB, 5.5 dB NF, DIE
Amplifier, Gain Block, 2 - 6 GHz, 25 dBm, 17dB, QFN 3x3mm
Amplifier, Gain Block, Ceramic Micro-X, Au/Ni
Amplifier, High Power, 4.4 - 5.1GHz, 40dBm, GaN, SMT
Amplifier, Instrumentation, -55 to 125*C, 18 Pin DIP
Amplifier, Linear Driver , 2 - 20 GHz, 28 dBm, 8dB, Chip
Amplifier, Linear Driver ,12 - 16GHz, 31dBm, 26dB, Chip
Amplifier, Linear Driver, 2.4 - 2.7GHz, 40dBm, 12dB, GaN, SMT
Amplifier, Linear Driver, 4.9 - 5.9 GHz, 40 dBm, 12 dB, GaN, SMT
Amplifier, Linear Driver, 4.9 - 5.9GHz, 33dBm, 10.5dB, QFN 5x5mm
Amplifier, Linear Power, 4.4 - 5.3 GHz, 20 W, 13 dB, 28V, Ceramic Flange package
Amplifier, Linear, .15 to 1.0 GHz, 35 dBm, 17 dB, DFN, 12-pin, 4 x 5 mm, GaAs
Amplifier, Linear, 4.4 - 5.1GHz, 36dBm, 10dB, Ceramic, SMT
Amplifier, LNA, .04 to 1 GHz, 13 dBm, 14 dB, 2.8 dB NF, 75 Ohm
Amplifier, LNA, .04- 4 GHz, 22.5 dB, 0.8 dB NF, MMIC
Amplifier, LNA, 0.3- 1.5 GHz, 19 dBm, 18.3 dB, 0.43 dB NF, SOT1327-1
Amplifier, LNA, 1.559 to 1.61 GHz, -9 dBm, 16.1 dB, 0.85 dB NF, SiGe:C
Amplifier, LNA, 2.7 to 3.8 GHz, 20 dBm, 18 dB, 0.9 dB NF, DIE
Amplifier, LNA, 20- 500 MHz, 27 dBm, 60 dB, 1.6 dB NF, Connectorized SMA female
Amplifier, Low Noise ,0.806 - 0.849GHz, 22dBm, 16dB,
Amplifier, Low Noise, 0.25-6GHz, 21.5dBm, 15dB, SOT-89
Amplifier, Low Noise, 1.6-2.1GHz, 28.5dBm, 14.5dBm, 8pin DFN
Amplifier, Low Noise, 2.4 to 2.5 GHz, 15 dB,6 Pad, 1.6 x 1.6 mm, DFN
Amplifier, Low Noise, 5 - 18 GHz, 21 dBm, 19 dB, DIE
Amplifier, Low Noise, L1/L2, 34 dB, Dual Output, TNC Female / TNC Female, Nickel Plate
Amplifier, MMIC, 0.2 - 3.1GHz, 20dBm, 20dB, SOT-89
Amplifier, MMIC, 0.25 - 2.15GHz, 6dBm, 25.8dB, SOT-363
Amplifier, MMIC, 0.7 to 1.0 GHz, 45 W, 34.7 dB, 28 V, SOT1211-2. LDMOS
Amplifier, MMIC, 0.7 to 1.0 GHz, 60 W, 34.7 dB, 28 V, SOT1211-2, LDMOS
Amplifier, MMIC, 1.805 to 2.17 GHz, 20 W, 31.5 dB, 28 V, LDMOS
Amplifier, MMIC, 1.805 to 2.17 GHz, 25 W, 28 V, SOT1462, LDMOS
Amplifier, MMIC, 1.805 to 2.17 GHz, 40 W, 31.5 dB, 28 V, LDMOS
Amplifier, MMIC, 50 - 1218 MHz, 20.6 dB, GaAs, QFN 5 x 7 mm
Amplifier, MMIC, 700 to 1000 MHz, 30 W, 35 dB, 28 V, SOT1211-2, LDMOS
Amplifier, Module, 0.020 - 6.0GHz, 34.7dBm, 16dB, 28V, Connectored
Amplifier, Module, 1- 250 MHz, 700 mW, 35 dB, 13.6 V
Amplifier, Module, WCDMA / HSUPA , with Coupler
Amplifier, MOSFET Module, 330 to 400 MHz, 30 W, 12.5 V, H2M package
Amplifier, PA Module
Amplifier, Pallet, 2.9- 3.3 GHz, 200 W, LDMOS
Amplifier, Power ,2.4 - 2.5GHz, 20dBm, 27dB, QFN 2x2mm
Amplifier, Power Module, CDMA/WCDMA, 4 x 3mm MCM
Amplifier, Power Module, FDD/TDD LTE, 4.0 x3.0mm MCM
Amplifier, Power Module, LTE/TDD/Band 40/AXGP, 2.5 x0.9mm MCM
Amplifier, Power, 1 to 8 GHz, 10 W, 30 dB, 28 V, GaN, 5 x 6 x 1.7 mm
Amplifier, Power, 1750-2200 MHz; 28 dB, 3.3v
Amplifier, Power, 1850MHz-1910MHz & 824-249MHz,
Amplifier, Power, 2.4 to 2.5 GHz, 31 dB, 16-Pin, 3 x 3 mm Laminate
Amplifier, Power, 2.5 to 2.7 GHz, 34 dB, High Linearity, 7 x 7 mm SMT
Amplifier, Power, 6 to 18 GHz, 10 W, 25 dB, 20 V, GaN, DIE
Amplifier, Power, 6 to 18 GHz, 20 W, 26 dB, DIE, GaN
Amplifier, Power, 7.9 to 11 GHz, 25 dB, 15 W, GaN,
Amplifier, Power, 824 - 1910 MHz, 13-pad MCM, 5 x 5 x 1.0
Amplifier, Quad Limiting Transimpedance, 16 to 30 GHz, 2.7 to 3.5 V, DIE
Amplifier, Reverse Hybrid, CATV, .005 to 1.00 GHz, 30 dB, SOT-115J
Amplifier, RF Power, 1.21 - 1.31GHz, 33.5dBm, 12dB
Amplifier, RF Power, 25 W, 1-50 MHz, 29 dB gain, 28 V, Connectorized
Amplifier, RF Power, 700-2500MHz, 32 Watts, GaN, Connectorized Module
Amplifier, RF, 10 MHz-600 MHz, +28dBm, 15V, Connectorized
Amplifier, RF, 5 MHz to 200 MHz , 800 mw, 35 dB gain, 28 V
Amplifier, Transimpedance, 30 BW GHz, 3.3 V
Amplifier, TriQuint CAP
Amplifier, Variable Gain, 2.11-2.17GHz,
Amplifier, Variable Gain, 2.575-2.735GHz, 28.5dBm, 25.5dB, 12-pin MCM
Amplifier,1030 to 1090 MHz, 250 W, Typ Gain in dB is 32.5 @ 1030 MHz, 50 V, LDMOS, SOT1720
Amplifier,1400 to 2200 MHz, 36.3 W, Typ Gain in dB is 32.7 @ 1800 MHz, 28 V, LDMOS, SOT1730
Amplifier,1800 to 2200 MHz, 63 W, Typ Gain in dB is 28.4 @ 1840 MHz, 28 V, LDMOS, SOT1722
Amplifier,1800 to 2200 MHz, 70 W, Typ Gain in dB is 28.2 @ 1840 MHz, 30 V, LDMOS, SOT1722
Amplifier,1805 to 2170 MHz, 12 W, Typ Gain in dB is 31.5 @ 2170 MHz, 28 V, LDMOS, SOT1720
Amplifier,1805 to 2170 MHz, 20 W, Typ Gain in dB is 32.6 @ 2140 MHz, 28 V, LDMOS, SOT1664
Amplifier,2110 to 2170 MHz, 54 W, Typ Gain in dB is 31.1 @ 2170 MHz, 28 V, LDMOS, SOT1720
Amplifier,2300 to 2690 MHz, 52 W, Typ Gain in dB is 27.5 @ 2590 MHz, 28 V, LDMOS, SOT1730
Amplifier,2450 to 2450 MHz, 25 W, Typ Gain in dB is 27.7 @ 2450 MHz, 28 V, LDMOS, SOT1723
Amplifier,2500 to 2700 MHz, 25 W, Typ Gain in dB is 28.5 @ 2700 MHz, 28 V, LDMOS, SOT1726
Balanced Amp, 8V, 12dB gain, 210mA, MES
Cable Amp, 24V, 22dB gain, 250mA, MESFET
CDMA & WCDMA / HSUPA Power Amplifier Module with Coupler, PCS/Band 2, 2-Bit (Hi/Med/Lo Power Modes)
DUAL BAND SWITCH DIPLEX FEM IN 3X3 QFN
Evaluation Boad for MMA-374030-R5
Features: 34 dBm midband Pout 25 dB nominal Gain 7 dB typical input return loss 12 dB typical output return loss Built-in directional power detector with reference 0.25um pHEMT technology...
Gen 2 replacement for TGA2576
HB/MB/LB LTE MMMB, Power Amplifer Module
Hybrid Power Doubler amplifier module employing GaAs dice
Hybrid Power Doubler amplifier module employing GaAs die
Hybrid Power Doubler amplifier module with high output capability employing GaAs dice. Features: Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Unconditionally stable under all...
Low Cost TX FEM SP16T
Low Noise, High Gain FTTH / RFoG Amplifier Typical Applications • High Dynamic Range FTTH • Mini-Node • Multi-Dwelling Unit TIA • Radio Frequency over Glass (RFoG, GPON, FTTH)
Operational Amplifier and ADC Driver
Power Amplifer Module for LTE FDD Band 13/14
Power Amplifier (PA) with superior output power, low noise, high linearity, and high efficiency. The device provides excellent linearity up to +48 dBm and an average 1 dB Output Compression...
Power Amplifier Module, .88 - 1.785 GHz, 1.2 dB, 33 dBm, 3.5V, MCM, 5.25 x 5.35
Power Amplifier Module, 1.880 - 2.025 Ghz, 3V, TD-SCDMA, Linear, 10-Pin, 3 mm x 3 mm
Power Amplifier Module, 1.92 to 1.98 GHz, 3V WCDMA BAND 1 LINEAR PA MODULE
Power Amplifier Module, 4.9 to 5.925 GHz, 21 dBm, 32 dB, QFN, 20-pin, 4 x 4
Power Amplifier, 802.11n WLAN, 2.4 to 2.5 GHz, 32 dB, 20 -Pin, 4 x 4 mm, QFN
Qorvo TriQuint's TGA2814-CP is a packaged high-power S-Band amplifier fabricated on TriQuint's TQGaN25 0.25 um GaN on SiC process. Operating from 3.1 to 3.6 GHz, the TGA2814-CP achieves 80 W...
Qorvo's QPM1000 is a combination limiter/LNA which provides 4 W CW survivability, > 16.4 B small signal gain and < 4 dB noise figure, with operation across the 2 -...
Qorvo's RFFM4527 is a low noise amplifier (LNA) designed for Wi-Fi 802.11a/n/ac systems. The integrated input and output 50Ω match minimizes layout area in the customer’s application, reduces the bill...
Qorvo's TGA2219 is a Ku-band, high power MMIC amplifier fabricated on TriQuint's production 0.15um GaN on SiC process. The TGA2219 operates from 13.4 – 16.5 GHz and provides 25 W...
RF Amplifier .450" Package
RF Amplifier Module, GaN, 2400-6000 MHz, 32 W PSAT, 38 dB Gain, 28 V, Connectorized
RF Amplifier, 0.450" Package
RF Amplifier, 0.5 to 35 MHz, +31 dBm, 21.9 dB
RF Amplifier, 0.625", Gullwing
RF Amplifier, 1 to 300 MHz, 13.5 dB Gain, 15 V, 4 Pin TO-8B (T8)
RF Amplifier, 10 to 100 MHz, 19.7 dB, +27.5 dBm, (H1) Connectorized Housing
RF Amplifier, 10 to 1000 MHz, 13 dB Gain, 15V, 4 Pin SMT (SM3)
RF Amplifier, 10 to 200 MHz, 18 dBm, 10 dB, Connectorized Housing (H1)
RF Amplifier, 10 to 2000 MHz, 10 dB Gain, 15 V, 4 Pin TO-8
RF Amplifier, 10 to 400 MHz, 14.4 dB Gain, 3 dB NF, 0.500” Sq. Package (E52-19422)
RF Amplifier, 100 kHz to 400 MHz, 15 dB, 3 Pin TO-39 (T10)
RF Amplifier, 1500-3000 MHz, 24 dBm P1dB, 38 dBm IP3, 36-38 dB Gain, +15V Connectorized
RF Amplifier, 17 to 27 GHz, 27.5 dBm, 45 dB, 12 V, SMA Female
RF Amplifier, 2 to 6 GHz, 4 W min, 24V, Connectorized, GaN, SMA-F
RF Amplifier, 20 to 500 MHz. 22 dB, 4 Pin SMT (SM3)
RF Amplifier, 25 to 110 MHz, 25.5 dBm, 20.5 dB, 15 V, 4 Pin TO-8 (T4)
RF Amplifier, 300 KHz to 400 MHz, 9.5 dBm, 19 dB, 3 Pin TO-39
RF Amplifier, 5 to 1000 MHz, 12 dB Gain, 15 V, 4 Pin SMT (SM3)
RF Amplifier, 5 to 125 MHz, 24 dBm, 20.5 dB, 4 Pin SMT (SM3)
RF Power Amplifier Module, 1.93 to 1.99 GHz, 32 dB, 24.5 dBm, 7 x 7 mm, Surface Mt
RF Power Amplifier Module
RFMD’s SBB2089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process...
RFMD's RFCA3306 is a high performance InGaP HBT MMIC amplifier designed to run from a single +8V supply, without the need for an external dropping resistor. The high gain, high...
SKY77340 PAM is designed in a compact form factor for quad-band cellular handsets comprising GSM850/900, DCS1800, PCS1900, supporting GMSK and linear EDGE modulation, and Class 12 GPRS multi-slot operation. Two...
Skyworks SKY65171-21 is a fully-matched, 0.5 W Power Amplifier (PA) with high efficiency, designed for use in the 1930 to 2170 MHz band. The device is fabricated using Skyworks high...
The advanced dual-band (Broadband Tx) Transmit Module designed for WCDMA/GSM mobile handset applica¬tions provides full RF transmit functionality in a size of only 30 mm2. The GSM850/900 and DCS/PCS power...
The BGA3012,BGA3015 and BGA3018 are extreme-broadband amplifiers that deliver 12, 15 and 18 dB of gain from 40 to 1006 MHz, while providing outstanding linearity performance. At the low end...
The CGR-0218Z is an InGaP HBT (HBT8D) push-pull amplifier in an SOIC-8 package. It is designed for ultra-linear (low multi-carrier distortion) reverse path amplification up to +50 dBmV per RF...
The D10040250GTH is a Hybrid Power Doubler amplifier module. The part employs GaAs die and is operated from 40MHz to 1000MHz. It provides excellent linearity and superior return loss performance...
The NBB-300 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost high-performance solution for general purpose RF and microwave amplification needs. This 50Ω gain block is based on a reliable HBT...
The NBB-310 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost high-performance solution for general purpose RF and microwave amplification needs. This 50Ω gain block is based on a reliable HBT...
The NLB-310 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost high-performance solution for general purpose RF and microwave amplification needs. This 50Ω gain block is based on a reliable HBT...
The Qorvo QPA9419 is a high-linearity three-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature compensation circuits. The amplifier provides 30 dB gain over the...
The Qorvo RFPD3220 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and operates from 45MHz to 1218MHz.
The Qorvo TGA2239-CP is a 3-stage, 50W power amplifier operating over the 13.4 to 15.5GHz band. Fabricated on Qorvo's production 0.15um GaN on SiC technology, this high performance amplifier offers...
The Qorvo TGA2976-SM is a wideband cascode amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. The cascode configuration offers exceptional wideband performance as well as supporting 40V operation.
The Qorvo TQP9424 is a high-linearity three-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature compensation circuits. The amplifier provides 36 dB gain over the...
The RF2374 is a switchable low noise amplifier with a high dynamic range designed for digital cellular and WiFi applications. The device functions as an outstanding front end low noise...
The RF2878 is a low noise amplifier with a very high dynamic range designed for digital cellular applications. The device functions as an outstanding front end low noise amplifier or...
The RF2884 is a low noise amplifier with a very high dynamic range designed for a broad range of applications. This part is ideal for use as a FM LNA...
The RF3183 is a high power amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The amplifier devices are manufactured on an advanced...
The RF5102 is a linear medium-power high-efficiency two-stage amplifier IC designed specifically for battery-powered WLAN applications such as PC cards mini PCI and compact flash applications. The device is manufactured...
The RF5355 is a linear, medium-power, high-efficiency power amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. It is also designed...
The RF5515 is a high performance Low Noise Amplifier design for 802.11a applications (4.9GHz to 5.85GHz) and other portable consumer electronics. This miniature LNA features a high dynamic range and...
The RF5622 is a linear, medium-power, high-efficiency, two-stage amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured...
The RF6285 is a high-power high-efficiency multi-band linear amplifier module specifically designed for 3V handheld systems. This amplifier uses a balanced architecture which makes the PA load insensitive and therefore...
The RF6886 is a linear, high power, high efficiency amplifier designed to use as a final stage/driver in linear or saturated transmit applications. The device is manufactured on an advanced...
The RFPA1012 is a GaAs HBT linear power amplifier specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high performance single-stage amplifier achieves ultra-high...
The RFPA2016 is a 3-stage HBT power amplifier module with high gain and excellent efficiency. External matching and bias control allows the RFPA2016 to be optimized for various applications including...
The RFPA5201 is a highly integrated Power Amplifier Module (PAM) designed for high performance WiFi requiring up to +29dBm linear output power. This PAM is manufactured on an advanced RFMD...
The S10040180P1 is a Hybrid Push Pull amplifier module. The part employs GaAs die and is operated from 40MHz to 1000MHz. It provides excellent linearity and superior return loss performance...
The S10040220P12 is a hybrid push pull amplifier module. The part employs GaAs pHEMT die and GaAs MESFET die, and is operated from 40 MHz to 1000 MHz. It provides excellent linearity...
The SE2568L is a complete 802.11 b/g WLAN discrete power amplifier. The device provides all the functionality of the power amplifier, power detector, filter, associated input, inter-stage and output matching...
The SE5005L is a 5GHz Power amplifier offering high linear power for wireless LAN applications. The SE5005L offers a high level of integration for a simplified design, providing quicker time...
The SKY65048-360LF is a high performance, two-stage ultra-low noise amplifier. The device is fabricated from Skyworks advanced pHEMT process and is provided in a 2 x 2 mm, 8-pin Quad...
The SKY65900-11 is a Microwave Monolithic Integrated Circuit (MMIC) Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65900-11 ideal for Wireless Local Area Network...
The SKY67023-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias and very high (+39.5 dBm OIP3) linearity. The advanced GaAs pHEMT enhancement mode process provides excellent return loss,...
The SKY67105-306LF is GaAs, pHEMT and HBT two stage Low-Noise Amplifier (LNA) with a active bias and high linearity performance. The advanced GaAs pHEMT enhancement mode front end device provides...
The SKY67107-306LF is a GaAs, pHEMT two stage Low-Noise Amplifier (LNA) with a active bias and high linearity performance. The advanced GaAs pHEMT enhancement mode front end device provides ultra-low...
The SKY67175-306LF is a two-stage, GaAs pHEMT Low-Noise Amplifier (LNA) specifically designed for use as a digital satellite radio LNA over the full 2320 to 2345 MHz band. The Evaluation...
The SKY77344 Power Amplifier Module (PAM) is designed in a compact form factor for quad-band cellular handsets comprising GSM850/900, DCS1800, PCS1900, supporting GMSK and linear EDGE modulation. Class 12 General...
The SKY77449 Power Amplifier Module (PAM) is a fully matched, surface mount module developed for LTE / EUTRAN applications. This small and efficient module packs full coverage of Bands XIII...
The SKY77709 Power Amplifier Module (PAM) is a fully matched, surface mount module developed for LTE / EUTRAN applications. This small and efficient module packs full coverage of LTE FDD...
The SKY77731 Power Amplifier Module (PAM) is a fully matched 10-pad surface mount module developed for Wideband Code Division Multiple Access (WCDMA) and Long Term Evolution (LTE) applications. This small...
The SKY77737 Power Amplifier Module (PAM) is a fully matched, surface mount module developed for LTE applications. This small and efficient module packs full coverage of LTE Bands XII /...
The SKY77761-11 Power Amplifier Module (PAM) is a fully matched 10-pad surface mount module developed for Wideband Code Division Multiple Access (WCDMA) applications. This small and efficient module packs full...
The SKY77761-12 Power Amplifier Module (PAM) is a fully matched 10-pad surface mount module developed for Wideband Code Division Multiple Access (WCDMA) applications. This small and efficient module packs full...
The Skyworks SKY65372-11 is variable gain Low-Noise Amplifier (LNA) with an active bias and high linearity performance. The first stage of the device is comprised of an LNA with a...
The Skyworks SKY65375-11 is a variable gain Low-Noise Amplifier (LNA) with an active bias and high linearity performance. The first stage of the device is comprised of an LNA with...
The SPF5189Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage...
The STA-6033 is a high performance, high efficiency 4.9-5.9 GHz Class AB Heterojunction Bipolar Transistor (HBT) power amplifier housed in a low cost surface mountable QFN 3x3 plastic package. This...
The TAT8804D1H is an ultra-linear, packaged GaAs MMIC amplifier, intended for output stage of CATV infrastructure applications. The TAT8804D1H provides flat gain along with low distortion, making it ideal for...
The TGA2614-SM is a S-Band Low Noise Amplifier utilizing TriQuint's proven 0.15um pHEMT production technology. Achieving high gain and low noise figure over the 2.7-3.8 GHz bandwidth, the TGA2614-SM is...
The TQM879008 is a digital variable gain amplifier (DVGA) featuring high linearity over the entire gain control range. This amplifier module integrates two gain blocks, a digital-step attenuator (DSA) and...
The TQM8M9077 is a digitally controlled variable gainamplifier (DVGA) with a broadband frequency range of 50to 4000 MHz. The DVGA features high linearity and low noise while providing digital variable...
The TQP369182 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 21.3 dB gain, +27.6 dBm OIP3,...
The TQP3M6005 is a low noise dual pHEMT discrete device operating from 1700 - 2000 MHz. Noise figure is typically 0.36 dB per channel and 0.54 dB when used in...
The TQP3M9008 is a cascadable, high linearity gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 20 dB gain, +36 dBm OIP3, and 1.3...
The TQP3M9028 is a cascadable, high linearity gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 14.7 dB gain, +40 dBm OIP3, and 2...
The TQP3M9036 is a high linearity, ultra low noise gain block amplifier in a small 2x2 mm surface-mount package. At 0.9 GHz, the amplifier typically provides 19 dB gain, +35...
The TQP3M9037 is a high linearity, ultra low noise gain block amplifier in a small 2x2 mm surface-mount package. At 1.9 GHz, the amplifier typically provides 20 dB gain, +35...
The TriQuint AG203-86G is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 900 MHz, the AG203-86 typically provides 19.5 dB gain, +21 dBm...
The TriQuint AH118-89G is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP / GaAs HBT is able to achieve high performance across a broad...
The TriQuint AH125-89G is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP / GaAs HBT is able to achieve high performance across a broad...
The TriQuint AH128-89G is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP / GaAs HBT is able to achieve high performance across a broad...
The TriQuint AH322-S8G is a high dynamic range driver amplifier in a low-cost surface-mount package. The InGaP / GaAs HBT is able to achieve high performance for various narrowband-tuned application...
The TriQuint ECG055B-G is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1000 MHz, the ECG055B-G typically provides 20.5 dB of gain, +34...
The TriQuint TGA1073C-SCC is a two stage PA MMIC design using TriQuint's proven 0.25 um Power pHEMT process to support a variety of millimeter wave applications including point-to-point digital radio...
The TriQuint TGA2238 is a high power MMIC amplifier fabricated on TriQuint's production 0.25um GaN on SiC process. The TGA2238 operates from 8 - 11 GHz and provides a superior...
The TriQuint TGA2514 is a compact 6.5 W Ku band power amplifier which operates from 13 - 18 GHz. The TGA2514 is designed using TriQuint's proven standard 0.25-um gate pHEMT...
The TriQuint TGA2533 is a Ku band power amplifier. The TGA2533 operates from 12.7 to 15.4 GHz and is designed using TriQuint's power pHEMT production process. The TGA2533 typically provides...
The TriQuint TGA2575-TS is a wideband power amplifier fabricated on TriQuint's production-released 0.15 um power pHEMT process. Operating from 32 to 38 GHz, it achieves 35.5 dBm saturated output power,...
The TriQuint TGA2590-CP is a wideband MMIC power amplifier fabricated on TriQuint's production 0.25um GaN on SiC process. The TGA2590-CP operates from 6-12GHz and provides 30W of saturated output power...
The TriQuint TGA2613 is a balanced S-Band high linearity Low Noise Amplifier. The balanced configuration provides return loss and improves robustness into non-ideal loads. The TGA2613 operates from 2.5 to...
The TriQuint TGA2613-SM is a balanced S-Band high linearity Low Noise Amplifier. The balanced configuration provides return loss and improves robustness into non-ideal loads. The TGA2613-SM operates from 2.5 to...
The TriQuint TGA2620-SM is a package Ku-band MMIC driver amplifier fabricated on TriQuint's 0.15um GaAs pHEMT production process. Operating from 16-18GHz, the TGA2620-SM provides more than 18.5dBm saturated output power,...
The TriQuint TGA2704-SM is a packaged, high power amplifer for 9-11 GHz applications. The part is designed using TriQuint's 0.25 um 3MI pHEMT production process. The TGA2704-SM typically provides 39.4...
The TriQuint TGA4705-FC is a flip-chip low noise amplifier (LNA) designed to operate at frequencies that target the automotive radar market. The TGA4705-FC is designed using TriQuint's proven 0.13 µm...
The TriQuint TQP3M9039 is a high linearity, ultra low noise figure dual device amplifier in a 4x4 mm package. At 830 MHz in a balanced configuration, the LNA provides 18...
The TriQuint TQP3M9041 is a high linearity, ultra low noise figure, dual device amplifier in a 4x4 mm package. At 1.95 GHz in a balanced configuration, the LNA provides 18.4...
The TriQuint WJA1500 is a cascadable gain block that offers high linearity in a low-cost surface mount package. At 200 MHz, the WJA1500 typically provides 19.5 dB gain, +43.5 dBm...
TriQuint's TGA2611-SM is a packaged broadband Low Noise Amplifier fabricated on TriQuint's production 0.25 um GaN on SiC process (TQGaN25). The TGA2611-SM operates from 2 to 6 GHz and typically...

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