RF Power Amplifier ICs -- PTMA080302M V1




Wideband RF LDMOS Integrated Power Amplifier, 30 W, 28 V, 700 – 1000 MHz
Summary of Features:
- Designed for wide RF modulation bandwidths, and low memory effects
- On-chip matching, integrated input DC block, 50-ohm input and ~ 8-ohm output
- Typical GSM/EDGE performance, 940 MHz, 28 V - Output power = 15 W Avg - Linear gain = 31 dB - Power added efficiency = 36% - EVM at 15 W = 1.7 % - ACPR at 400 kHz = –61 dBc - ACPR at 600 kHz = –73 dBc
- Typical CW performance at 940 MHz, 28 V - Output power at P1dB = 32 W - Linear gain (1 W) = 31 dB - Power added efficiency = 46%
- Capable of handling 10:1 VSWR @ 28 V, 30 W (CW) output power
- Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F
- Package: PG-DSO-20-63, surface mount