Wideband RF LDMOS Integrated Power Amplifier - 15W, 28V, 1800-2200MHz
Summary of Features:
- Designed for wide RF bandwidth and low memory effects
- Broadband input on-chip matching
- Typical two-carrier WCDMA performance at 2140MHz, 28V, 7W avg, - Gain = 28.5dB - Power Added Efficiency = 33% - IMD3 = –32dBc
- Typical CW performance at 2140MHz, 28V - Output power at P1dB ~ 20W - Efficiency > 49%
- Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F
- Capable of handling 10:1 VSWR @ 28 V, 15 W (CW) output power
- Thermally-enhanced RoHS-compliant package