RF Amplifiers from Infineon Technologies AG
RF Power Amplifier ICs -- PTMC210204MD V1




Wideband LDMOS Two-stage Integrated Power Amplifier, 10 W + 10 W, 28 V, 1805 – 2200 MHz
Summary of Features:
- On-chip matching for broadband operation
- Dual independent outputs, 10 W each
- Typical pulsed CW performance, 1990 MHz, 28 V, combined outputs - Output power at P 1dB = 20.9 W - Efficiency = 56% - Gain = 31 dB
- Capable of handling 10:1 VSWR @28 V, 20.9 W (CW) output power
- Integrated ESD protection
- Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)
- Integrated temperature compensation
- Pb-free and RoHS-compliant
Specifications
Product Category
RF Amplifiers
RoHS Compliant
RoHS
Frequency Range
1805 to 2200 MHz
Minimum Gain
30.5 dB
Maximum Gain
30.5 dB
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