Low Noise Amplifier LNA ICs -- BGB707L7ESD




The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing. The device is as flexible as a discrete transistor and features high gain, reduced power consumption and very low distortion for a very wide range of applications. The device is based upon Infineon Technologies cost effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green package
Summary of Features:
- High performance general purpose wide band MMIC LNA
- ESD protection integrated for all pins (3 kV for RF input vs. GND, 2 kV for all other pin combinations, HBM)
- Integrated active biasing circuit enables stable operation point against temperature- and processing-variations
- Excellent noise figure from Infineon´s reliable high volume SiGe:C technology
- High gain and linearity at low current consumption
- Operation voltage: 1.8 V to 4.0 V
- Adjustable operation current 2.1 mA to 25 mA by external resistor
- Power-off function
- Very small and leadless package TSLP-7-1, 2.0 x 1.3 x 0.4 mm3
- Pb-free (RoHS compliant) and halogen-free (WEEE compliant) package Applications
Target Applications:
- Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, WiFi, Bluetooth
- Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
- Multimedia applications such as mobile/portable TV, CATV, FM Radio
- 3G/4G UMTS/LTE mobile phone applications
- ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications