The CMD217 is a 8.5 W RF / Microwave GaN MMIC power amplifier die ideally suited for Ka band communications systems where high power and high linearity are indispensable design requirements. This device delivers greater than 20 dB of gain with a corresponding output 1 dB compression point of +36.7 dBm and a saturated output power of +39.3 dBm at 35% power added efficiency. The CMD217 amplifier is a 50 ohm matched design eliminating the need for external DC blocks and RF port matching. The CMD217 also offers full passivation for increased reliability and moisture protection.

• Excellent efficiency
• High linearity
• High Power
• Positive gain slope
• Small die size

3A001.b.2.c

Released – for new design

• DIE
• RoHS Compliant