Archer AIM+ sets the standard for lithography process control through the > 45-nm node. Based on the mature AIM technology, the system complies with the most advanced processes, meeting ITRS and industry requirements to address all overlay error budget aspects.
With a 20 percent increase in throughput over previous-generation solutions, the tool improves both yield and cost of ownership (CoO).
- Field-proven AIM grating-style technology and box-in-box (BiB) target type, with hardware and optics improvements for reduced total measurement uncertainty (TMU) by 50%
- Improved optics design with reduced lens aberrations for improved tool-induced shift (TIS) measurement, variability, and matching results
- High accuracy measurements, particularly with low-contrast layers
Overlay Metrology Enables overlay budget tightening for ??45-nm technology nodes; measures overlay registration; provides 3D data for focusing and image enhancement. Virtually perfect optical alignment allows maximum accuracy and matching. An active isolation system minimizes vibration for best precision.
CMP The AIM grating target is designed to fit CMP design rules, without leaving any large open areas on the printed target. This enables printing a target with high mark fidelity and measurement with higher accuracy.
Lithography Increases overall equipment effectiveness of lithography cell tools. Reliably and accurately measures in exact process conditions for better stepper matching and lithography process control.
Wafer Surface Focus and Analysis A patented, field-proven white light interferometric technique utilizing 3D information allows for more accurate, repeatable focus position from actual wafer surface.