Wolfspeed Datasheets for Power Amplifiers

Power amplifiers deliver a specific amount of AC power to a load. They are used in audio frequency and radio frequency applications.
Power Amplifiers: Learn more

Product Name Notes
25-W, 6.0 - 12.0-GHz, GaN MMIC, Power Amplifier -- CMPA601C025F The CMPA601C025F GaN HEMT MMIC amplifier offers 25 watts of power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally enhanced, 10-lead...
25-W, 2.0 – 6.0-GHz, GaN MMIC Power Amplifier -- CMPA2060025D Wolfspeed’s CMP2060025D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift...
25-W, 2.5 – 6.0-GHz, GaN MMIC Power Amplifier -- CMPA2560025D Wolfspeed’s CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher...
25-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier -- CMPA5585025D Wolfspeed’s CMP5585025D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift...
25-W, 8.0 – 11.0-GHz, GaN MMIC Power Amplifier -- CMPA801B025D Wolfspeed’s CMP801B025D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift...
2-W, 20-MHz – 6000-MHz, GaN MMIC Power Amplifier -- CMPA0060002F Wolfspeed’s CMPA0060002F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown...
25-W, 20-MHz – 6.0-GHz, GaN MMIC Power Amplifier -- CMPA0060025D Wolfspeed’s CMPA0060025D is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown...
25-W, 20-MHz – 6000-MHz, GaN MMIC Power Amplifier -- CMPA0060025F Wolfspeed’s CMPA0060025F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift...
60-W, 12.7 to 13.25-GHz, 40-V, GaN MMIC Power Amplifier -- CMPA1C1D060D Wolfspeed’s CMPA1C1D060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared...
25-W, 13.75 to 14.5-GHz, 40-V, Ku-Band GaN MMIC Power Amplifier -- CMPA1D1E025F Wolfspeed’s CMPA1D1E025F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate length fabrication process. GaN-on-SiC has superior properties...
30-W, 13.75 to 14.5-GHz, 40-V, GaN MMIC Power Amplifier -- CMPA1D1E030D Wolfspeed’s CMPA1D1E030D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared...
25-W, 2500 – 6000-MHz, GaN MMIC Power Amplifier -- CMPA2560025F Wolfspeed’s CMPA2560025F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift...
75-W, 2.7 – 3.5-GHz, GaN MMIC Power Amplifier -- CMPA2735075D Wolfspeed’s CMPA2735075D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity...
75-W, 2.7 – 3.5-GHz, GaN MMIC Power Amplifier -- CMPA2735075F Wolfspeed’s CMPA2735075F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift...
25-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier -- CMPA5585025F Wolfspeed’s CMPA5585025F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown...
30-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier -- CMPA5585030F Wolfspeed’s CMPA5585030F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown...
25-W, 6.0 – 12.0-GHz, GaN MMIC Power Amplifier -- CMPA601C025D Wolfspeed’s CMPA601C025D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared...
25-W, 8.0 – 11.0-GHz, GaN MMIC Power Amplifier -- CMPA801B025 Wolfspeed’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher...