This support circuit provides the high positive voltage required to program the EEPROM memory cells. It generates approximately +20V with a multi-stage charge pump. It includes a high frequency oscillator and voltage regulator. This circuit is designed for AMI’s 0.5 micron, CMOS process. For more information, please refer to the following specification or contact CSS.
Custom Silicon Solutions, Inc. | |
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Product Category | Memory Chips |
Product Number | VPP Generator |
Product Name | IP Products |
Memory Category | EEPROM |