Insulated Gate Bipolar Transistors (IGBT) Datasheets

Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching).
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Insulated Gate Bipolar Transistors (IGBT) Datasheets From:
Headquarters
Allen-Bradley / Rockwell Automation
United States
Radwell International
United States
Richardson RFPD
United States
LIXINC Electronics Co., Limited
China
Acme Chip Technology Co., Limited
China
Karl Kruse GmbH & Co. KG
Germany
LCSC Electronics Technology (HK) Limited
China
ROHM Semiconductor GmbH
Germany
Toshiba America, Inc.
New York, NY
Utmel Electronic Limited
China
VAST STOCK CO., LIMITED
Hong Kong
ABB AB
Switzerland
Allied Electronics, Inc.
Fort Worth, TX
Cosel U.S.A., Inc.
United States
Cypress Semiconductor Corp.
United States
Danfoss Inc.
Canada
FuxinSemi Semiconductor (Shenzhen) Co., Ltd.
China
IXYS UK Westcode Ltd.
United Kingdom
KYOCERA AVX Components Corporation
Fountain Inn, SC
Mitsubishi Electric & Electronics USA, Inc.
United States
multicomp PRO
Chicago, IL
Newark, An Avnet Company
United States
Opto 22
Temecula, CA
Shenzhen SPTECH Micro-electronics Co., Ltd.
China
Siemens Analytical Products
United States
Xilinx, Inc.
United States
Zebra Technologies Corporation
Vernon Hills, IL