Metal-Oxide Semiconductor FET (MOSFET) Datasheets

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
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Metal-Oxide Semiconductor FET (MOSFET) Datasheets From:
Headquarters
Richardson RFPD
United States
TE Connectivity
United States
Acme Chip Technology Co., Limited
China
Karl Kruse GmbH & Co. KG
Germany
LCSC Electronics Technology (HK) Limited
China
PUI - Projections Unlimited, Inc.
United States
ROHM Semiconductor GmbH
Germany
Shenzhen Shengyu Electronics Technology Limited
China
Toshiba America, Inc.
New York, NY
Universal Semiconductor, Inc.
San Jose, CA
Utmel Electronic Limited
China
VAST STOCK CO., LIMITED
Hong Kong
Allied Electronics, Inc.
Fort Worth, TX
Bosch Sensortec GmbH
Germany
China Resources Microelectronics Limited
China
Columbia Research Labs, Inc.
Woodlyn, PA
D3 Semiconductor, LLC
United States
Formosa Microsemi Co., Ltd.
Taiwan
FuxinSemi Semiconductor (Shenzhen) Co., Ltd.
China
Guangdong YFW Electronics Co, Ltd.
China
IceMos Technology, Ltd.
United States
Integra Technologies
United States
Integrated Device Technology
San Jose, CA
IXYS Integrated Circuits Division
United States
Jiangsu High Diode Semiconductor Co., Ltd.
China
Jiangsu Weida Semiconductor Co., Ltd.
China
Kionix, Inc.
Ithaca, NY
LAPIS Semiconductor
Japan
Luguang Electronic Technology CO.,LTD.
China
MEMSIC, Inc.
United States
Mitsubishi Electric & Electronics USA, Inc.
United States
Motorola Solutions, Inc.
United States
multicomp PRO
Chicago, IL
Newark, An Avnet Company
United States
Nidec Copal (USA) Corporation
Torrance, CA
NXP USA, Inc.
Austin, TX
Parallax, Inc.
United States
pSemi
United States
Sanyo Denki America, Inc.
Torrance, CA
SGS, Inc.
United States
Shenzhen All Power Semiconductor Co.,Ltd
China
SINO-IC Microelectronic Co., Ltd.
China
Toshiba Semiconductor & Storage Products
United States