Infineon Technologies AG Datasheets for Bipolar RF Transistors

Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
Bipolar RF Transistors: Learn more

Product Name Notes
HiRel Microwave Transistor Summary of Features Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Potential Applications For low noise, high-gain broadband amplifiers at collector...
HiRel Microwave Transistor Summary of Features Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Type Variant No. 03 ESA Space Qualified ESSCC Detail Spec.
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at...
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8...
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz...
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package fT= 6,5 GHz...
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Specified 1/f Noise Hermetically sealed microwave package...
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package...
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8...
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz...
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain low noise RF transistor High maximum stable gain: Gms 24dB at 1.8 GHz Noise figure F =...
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain ultra low noise RF transistor Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise...
HiRel Microwave Transistor Summary of Features For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers Specified 1/f Noise Hermetically sealed microwave package fT= 8GHz F = 1.75...
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8...
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain ultra low noise RF transistor Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise...
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR108W
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR133W
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR166W
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR191W
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Fast Switching Transistor // SMBT3906S
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BC859C
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCP53-16
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCP56-10
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX52-16
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX53
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX56
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX68-25
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX69-25
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN18
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN19
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN38
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NPN / PNP Silicon Switching Transistor Array Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS...
NPN Silicon AF and Switching Transistor Summary of Features For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary type: BCX41 (NPN) Pb-free (RoHS compliant) package Qualified according...
NPN Silicon AF and Switching Transistor Summary of Features For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary type: BCX42 (PNP) Pb-free (RoHS compliant) package Qualified according...
NPN Silicon AF Transistor Arrays Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated transistors with good matching in one package BC846S / U, BC847S:...
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package...
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PN P) Pb-free (RoHS compliant) package...
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN) Pb-free (RoHS compliant)...
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant)...
NPN Silicon Digital Transisto Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47kΩ, R2=22kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
NPN Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 10 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
NPN Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 4.7 kΩ, R2= 4.7 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit driver circuit Built in bias resistor (R1=10 kΩ, R2=47 kΩ) BCR135S: Two internally isolated transistors with good matching...
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit driver circuit Built in bias resistor (R1=47 kΩ, R2=47 kΩ) BCR148S: Two internally isolated transistors with good matching...
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) BCR108S: Two internally isolated transistors with good matching...
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22kΩ, R2=22kΩ) BCR141S / U: Two internally isolated transistors with good matching...
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22kΩ, R2=22kΩ) BCR141S : Two internally isolated transistors with good matching in...
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22kΩ, R2=47kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
NPN silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7 kΩ) BCR119S: Two internally isolated transistors with good matching in one multichip...
NPN Silicon Digital Transistor Summary of Features Switching in circuit, inverter, interface circuit, drive circuit Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) BCR133S: Two internally...
NPN Silicon High-Voltage Transistors Summary of Features Low collector-emitter saturation voltage Complementary types: SMBTA92 / MMBTA92(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101
NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP)...
NPN Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2907A / MMBT2907A (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101
NPN Silicon Switching Transistors Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching...
NPN Silicon Switching Transistors Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching...
PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 1 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 10 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 10 kΩ , R2 = 47 kΩ ) BCR185S: Two...
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 22kΩ , R2 = 47kΩ ) Pb-free (RoHS compliant) package...
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7 kΩ , R2 = 47 kΩ ) Pb-free (RoHS...
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7 kΩ) BCR169S: Two internally isolated transistors with good matching...
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 47 kΩ , R2 = 47 kΩ ) BCR198S: Two...
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101...
PNP Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN26 (NPN)...
PNP Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA42 /...
PNP Silicon Switching Transistor Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with...
PNP Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101
PNP Silicon Switching Transistors Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with...