Infineon Technologies AG Datasheets for Bipolar RF Transistors
Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
Bipolar RF Transistors: Learn more
Product Name | Notes |
---|---|
HiRel Microwave Transistor Summary of Features Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Potential Applications For low noise, high-gain broadband amplifiers at collector... | |
HiRel Microwave Transistor Summary of Features Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Type Variant No. 03 ESA Space Qualified ESSCC Detail Spec. | |
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at... | |
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8... | |
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz... | |
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package fT= 6,5 GHz... | |
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Specified 1/f Noise Hermetically sealed microwave package... | |
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package... | |
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8... | |
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz... | |
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain low noise RF transistor High maximum stable gain: Gms 24dB at 1.8 GHz Noise figure F =... | |
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain ultra low noise RF transistor Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise... | |
HiRel Microwave Transistor Summary of Features For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers Specified 1/f Noise Hermetically sealed microwave package fT= 8GHz F = 1.75... | |
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8... | |
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain ultra low noise RF transistor Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise... | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR108W | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR133W | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR166W | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR191W | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Fast Switching Transistor // SMBT3906S | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BC859C | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCP53-16 | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCP56-10 | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX52-16 | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX53 | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX56 | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX68-25 | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX69-25 | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN18 | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN19 | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN38 | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN39 | |
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // PZTA42 | |
NPN / PNP Silicon Switching Transistor Array Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS... | |
NPN Silicon AF and Switching Transistor Summary of Features For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary type: BCX41 (NPN) Pb-free (RoHS compliant) package Qualified according... | |
NPN Silicon AF and Switching Transistor Summary of Features For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary type: BCX42 (PNP) Pb-free (RoHS compliant) package Qualified according... | |
NPN Silicon AF Transistor Arrays Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated transistors with good matching in one package BC846S / U, BC847S:... | |
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package... | |
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PN P) Pb-free (RoHS compliant) package... | |
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN) Pb-free (RoHS compliant)... | |
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant)... | |
NPN Silicon Digital Transisto Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47kΩ, R2=22kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
NPN Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 10 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
NPN Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 4.7 kΩ, R2= 4.7 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit driver circuit Built in bias resistor (R1=10 kΩ, R2=47 kΩ) BCR135S: Two internally isolated transistors with good matching... | |
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit driver circuit Built in bias resistor (R1=47 kΩ, R2=47 kΩ) BCR148S: Two internally isolated transistors with good matching... | |
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) BCR108S: Two internally isolated transistors with good matching... | |
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22kΩ, R2=22kΩ) BCR141S / U: Two internally isolated transistors with good matching... | |
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22kΩ, R2=22kΩ) BCR141S : Two internally isolated transistors with good matching in... | |
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22kΩ, R2=47kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
NPN silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7 kΩ) BCR119S: Two internally isolated transistors with good matching in one multichip... | |
NPN Silicon Digital Transistor Summary of Features Switching in circuit, inverter, interface circuit, drive circuit Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) BCR133S: Two internally... | |
NPN Silicon High-Voltage Transistors Summary of Features Low collector-emitter saturation voltage Complementary types: SMBTA92 / MMBTA92(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP)... | |
NPN Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2907A / MMBT2907A (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
NPN Silicon Switching Transistors Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching... | |
NPN Silicon Switching Transistors Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching... | |
PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 1 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 10 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 10 kΩ , R2 = 47 kΩ ) BCR185S: Two... | |
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 22kΩ , R2 = 47kΩ ) Pb-free (RoHS compliant) package... | |
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7 kΩ , R2 = 47 kΩ ) Pb-free (RoHS... | |
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7 kΩ) BCR169S: Two internally isolated transistors with good matching... | |
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 47 kΩ , R2 = 47 kΩ ) BCR198S: Two... | |
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101... | |
PNP Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN26 (NPN)... | |
PNP Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA42 /... | |
PNP Silicon Switching Transistor Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with... | |
PNP Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
PNP Silicon Switching Transistors Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with... |